Dual Material Pile Gate Approach for Low Leakage Finfet
نویسندگان
چکیده
منابع مشابه
3D modeling of dual-gate FinFET
The tendency to have better control of the flow of electrons in a channel of field-effect transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field plates in a variety of metal semiconductor field-effect transistors and high electron mobility transistors, and finally a gate wrapping around three sides of a narrow fin-shaped channel in a FinFET. With the ...
متن کاملNovel dual-Vth independent-gate FinFET circuits
This paper describes gate work function and oxide thickness tuning to realize novel circuits using dual-Vth independent-gate FinFETs. Dual-Vth FinFETs with independent gates enable series and parallel merge transformations in logic gates, realizing compact low power alternatives. Furthermore, they also enable the design of a new class of compact logic gates with higher expressive power and flex...
متن کاملIndependent Gate Finfet Sram Cell Using Leakage Reduction Techniques
1 Research Scholar of Sagar Institute of Research & Technology, Bhopal, Madhya Pradesh, India 2 Professor, Dept. of Electronics and Communication, Sagar Institute of Research & Technology, Bhopal, Madhya Pradesh, India. __________________________________________________________________________________________ Abstract: Scaling of devices in bulk CMOS technology contributes to short channel effe...
متن کاملGround plane fin-shaped field effect transistor (GP-FinFET): A FinFET for low leakage power circuits
In this paper, a fin-shaped field effect transistor (FinFET) structure which uses ground plane concept is proposed and theoretically investigated. The ground plane reduces the coupling of electric field between the source and drain reducing drain-induced barrier lowering (DIBL). To assess the performance of the proposed structure, some device characteristics of the structure have been compared ...
متن کاملNand Gate Using Finfet for Nanoscale Technology
ABSTRACT In this paper we propose Double gate transistors (FinFETs) are the substitutes for bulk CMOS evolving from a single gate devices into three dimensional devices with multiple gates (double gate, triple gate or quadruple-gate devices). The main drawback of using CMOS transistors are high power consumption and high leakage current. Enormous progress has been made to scale transistors to e...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: International Journal of Technology
سال: 2017
ISSN: 2087-2100,2086-9614
DOI: 10.14716/ijtech.v8i1.3699